document number: 94361 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 1 igbt sip module (fast igbt) CPV362M4FPBF vishay high power products features ? fully isolated printed circuit board mount package ? switching-loss rating includes all ?tail? losses ? hexfred ? soft ultrafast diodes ? optimized for medium speed 1 to 10 khz see fig. 1 for current vs. frequency curve ? totally lead (pb)-free ? designed and qualified for industrial level description the igbt technology is the ke y to the advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of t he familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. this package is highly suited to motor drive applications and wh ere space is at a premium. product summary output current in a typical 5.0 khz motor drive i rms per phase (3.1 kw total) with t c = 90 c 11 a t j 125 c supply voltage (dc) 360 v power factor 0.8 modulation depth see fig. 1 115 % v ce(on) (typical) at i c = 4.8 a, 25 c 1.41 v ims-2 rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 600 v continuous collector current, each igbt i c t c = 25 c 8.8 a t c = 100 c 4.8 pulsed collector current i cm repetitive rating; v ge = 20 v, pulse width limited by maximum junction temperature. see fig. 20 26 clamped inductive load current i lm v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 50 see fig. 19 800 diode continuous forward current i f t c = 100 c 3.4 diode maximum forward current i fm 26 gate to emitter voltage v ge 20 v isolation voltage v isol any terminal to case, t = 1 min 2500 v rms maximum power dissipation, each igbt p d t c = 25 c 23 w t c = 100 c 9.1 operating junction and storage temperature range t j , t stg - 40 to + 150 c soldering temperature for 10 s 300 (0.063" (1.6 mm) from case) mounting torque 6-32 or m3 screw 5 to 7 (0.55 to 0.8) lbf in (n m) thermal and mechanical specifications parameter symbol typ. max. units junction to case, each igbt, one igbt in conduction r thjc (igbt) - 5.5 c/w junction to case, each diode, one diode in conduction r thjc (diode) - 9.0 case to sink, flat, greased surface r thcs (module) 0.1 - weight of module 20 (0.7) - g (oz.)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94361 2 revision: 01-sep-08 CPV362M4FPBF vishay high power products igbt sip module (fast igbt) electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v (br)ces v ge = 0 v, i c = 250 a pulse width 80 s, duty factor 0.1 % 600 - - v temperature coeff. of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1.0 ma - 0.72 - v/c collector to emitter saturation voltage v ce(on) i c = 4.8 a v ge = 15 v see fig. 2, 5 - 1.41 1.7 v i c = 8.8 a - 1.66 - i c = 4.8 a, t j = 150 c - 1.42 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 gate to emitter leakage current i ges v ge = 20 v - - 100 na temperature coeff. of threshold voltage v ge(th) / t j v ge = 0 v, i c = 1.0 ma - -11 - mv/c forward transconductance g fe v ce = 100 v, i c = 4.8 a pulse width 5.0 s; single shot 2.9 5.0 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 1700 diode forward voltage drop v fm i c = 8.0 a i c = 8.0 a, t j = 150 c see fig. 13 -1.41.7 v -1.31.6 switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn on) q g i c = 4.8 a v cc = 400 v see fig. 8 -3045 nc gate to emitter charge (turn on) q ge -4.06.0 gate to collector charge q gc -1320 turn-on delay time t d(on) t j = 25 c i c = 4.8 a, v cc = 480 v v ge = 15 v, r g = 50 energy losses include ?tail? and diode reversev recovery. see fig. 9, 10, 18 -49- ns rise time t r -22- turn-off delay time t d(off) - 200 300 fall time t f - 214 320 turn-on switching loss e on -0.23- mj turn-off switching loss e off -0.33- total switching loss e ts -0.450.70 turn-on delay time t d(on) t j = 150 c, i c = 4.8 a, v cc = 480 v v ge = 15 v, r g = 50 energy losses include ?tail? and diode reverse recovery see fig. 10, 11, 18 -48- ns rise time t r -25- turn-off delay time t d(off) -435- fall time t f -364- total switching loss e ts -0.93- mj input capacitance c ies v ge = 0 v v cc = 30 v see fig. 7 -340- pf output capacitance c oes -63- reverse transfer capacitance c res -5.9- diode reverse recovery time t rr t j = 25 c see fig. 14 i f = 8.0 a v r = 200 v di/dt = 200 a/s -3755 ns t j = 125 c - 55 90 diode peak reverse recovery current i rr t j = 25 c see fig. 15 -3.550 a t j = 125 c - 4.5 8.0 diode reverse recovery charge q rr t j = 25 c see fig. 16 - 65 138 nc t j = 125 c - 124 360 diode peak rate of fall of recovery during t b di (rec)m /dt t j = 25 c see fig. 17 -240- a/s t j = 125 c - 210 -
document number: 94361 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 3 CPV362M4FPBF igbt sip module (fast igbt) vishay high power products fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collector to emitter voltage vs. junction temperature 0 4 3 2 1 5 6 7 8 9 0.1 1 f - frequency (khz) load current (a) 100 0.00 0.29 0.5 8 0. 88 1.17 1.46 1.75 2.05 2.34 2.63 10 t c = 90 c t j = 125 c po w er factor = 0. 8 mod u lation depth = 1.15 v cc = 50 % of rated v oltage total output power (kw) 1 100 10 i c - collector to ermitter current (a) v ce - collector to emitter voltage (v) 10 1 v ge = 15 v 20 s p u lse w idth t j = 25 c t j = 150 c 1 100 10 i c - collector to emitter current (a) v ge - gate to emitter voltage (v) 67 8 9 1011121314 5 v cc = 50 v 5 s p u lse w idth t j = 25 c t j = 150 c 0 2 4 6 8 10 maximum dc collector current (a) t c - case temperature (c) 25 50 75 100 125 150 1.0 2.0 1.5 2.5 v ce - collector to emitter voltage (v) t j - junction temperature (c) - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 160 v ge = 15 v 8 0 s p u lse w idth i c = 9.6 a i c = 4. 8 a i c = 2.4 a
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94361 4 revision: 01-sep-08 CPV362M4FPBF vishay high power products igbt sip module (fast igbt) fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single p u lse (thermal response) p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 0 8 00 1000 600 400 200 c - capacitance (pf) v ce - collector to emitter voltage (v) 10 100 1 v ge = 0 v , f = 1 mhz c ies = c ge + c ce shorted c res = c gc c oes = c ce + c gc c ies c oes c res 0 12 16 4 8 20 v ge - gate to emitter voltage (v) q g - total gate charge (nc) 6121 8 24 30 0 v cc = 400 v i c = 4. 8 a 0.42 0.43 0.44 0.45 0.46 total switching losses (mj) r g - gate resistance ( ) 20 30 40 50 10 v cc = 4 8 0 v v ge = 15 v t j = 25 c i c = 4. 8 a 0.1 1 10 total switching losses (mj) t j - junction temperature (c) - 40 - 20 0 60 40 20 8 0 100 120 140 160 - 60 r g = 50 v ge = 15 v v cc = 4 8 0 v i c = 9.6 a i c = 4. 8 a i c = 2.4 a
document number: 94361 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 5 CPV362M4FPBF igbt sip module (fast igbt) vishay high power products fig. 11 - typical switching losses vs. collector to emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current fig. 14 - typical reverse recovery time vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt 0.0 0.5 1.0 1.5 2.0 total switching losses (mj) i c - collector to emitter current (a) 246 8 10 0 r g = 50 t j = 150 c v cc = 4 8 0 v v ge = 15 v 1 100 10 i c - collector to emitter current (a) v ce - collector to emitter voltage (v) 10 100 1000 1 safe operating area v ge = 20 v t j = 125 c 0.1 1 100 10 i f - instantaneous forward current (a) v fm - forward voltage drop 0.4 2.0 2.4 1.6 1.2 0. 8 2. 8 3.2 t j = 150 c t j = 125 c t j = 25 c 0 100 20 40 60 8 0 t rr (ns) di f /dt (a/s) 1000 100 i f = 8 .0 a i f = 4.0 a v r = 200 v t j = 125 c t j = 25 c i f = 16 a 1 100 10 i irrm - (a) di f /dt - (a/s) 1000 100 i f = 16 a i f = 8 .0 a i f = 4.0 a v r = 200 v t j = 125 c t j = 25 c 0 100 200 300 400 500 q rr - (nc) di f /dt - (a/s) 1000 100 i f = 16 a i f = 8 .0 a i f = 4.0 a v r = 200 v t j = 125 c t j = 25 c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94361 6 revision: 01-sep-08 CPV362M4FPBF vishay high power products igbt sip module (fast igbt) fig. 17 - typical di (rec)m /dt vs di f /dt fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms of circuit of fig. 18a, defining e off , t d(off) , t f fig. 18c - test waveforms of circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms of circuit of fig. 18a, defining e rec , t rr , q rr , i rr fig. 18e - macro waveforms for figure 18a?s test circuit 100 10 000 1000 di (rec)m /dt - (a/s) di f /dt - (a/s) 1000 100 i f = 16 a i f = 8 .0 a i f = 4.0 a v r = 200 v t j = 125 c t j = 25 c d.u.t. 430 f 8 0 % of v ce same type de v ice as d.u.t. i c v ce t1 t2 90 % i c 10 % v ce t d (off) tf i c 5 % i c t1 + 5 s v ce i c dt t1 90 % v ge + v ge eoff = t2 v ce i c dt t1 5 % v ce i c i pk v cc 10 % i c vce t1 t2 d.u.t. voltage and current gate voltage d.u.t. + v g 10 % + v g 90 % i c tr t d (on) eon = diode reverse recovery energy tx e rec = t4 v d i c dt t3 t4 t3 diode recovery waveforms i c v pk 10 % v cc i rr 10 % i rr v cc t rr q rr = t rr i c dt tx v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2
document number: 94361 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 7 CPV362M4FPBF igbt sip module (fast igbt) vishay high power products fig. 19 - clamped inductive load test circuit fig . 20 - pulsed collector current test circuit circuit configuration 50 v 6000 f 100 v 1000 v v c * l d.u.t. r l = 480 v 4 x i c at 25 c 0 - 480 v 3 6 7 1 8 15 10 4 9 12 d1 d2 q1 q2 q3 q4 q5 q6 1 13 19 16 d3 d5 d4 d6 links to related documents dimensions http://www.vishay.com/doc?95066
document number: 95066 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jul-07 1 ims-2 (sip) outline dimensions vishay semiconductors dimensions in millimeters (inches) notes (1) tolerance uless otherwise sp ecified 0.254 mm (0.010") (2) controlling dimension: inch (3) terminal numbers are sh own for reference only ims-2 package outline (13 pins) 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 6.10 (0.240) 3.05 0.38 (0.120 0.015) 0.51 (0.020) 0.38 (0.015) 62.43 (2.458) 53.85 (2.120) ? 3.91 (0.154) 2 x 21.97 (0.865) 3.94 (0.155) 4.06 0.51 (0.160 0.020) 5.08 (0.200) 6 x 1.27 (0.050) 13 x 2.54 (0.100) 6 x 0.76 (0.030) 13 x 1 3 4 6 7 9 10 12 13 15 16 18 19 17 14 11 258
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